2016-2020 [2019.10.23] Surface-tensile-stress induced polishing-voids suppression via H2O2 oxidizer effect in cross-point phase-change-memory-cells
2021.08.12 14:26
Surface-tensile-stress induced polishing-voids suppression via H2O2 oxidizer effect in cross-point phase-change-memory-cells
Soo-Bum Kim, Hao Cui, Jong-Young Cho, Eun-Bin Seo, Sang-Su Yun, Young-Hye Son, Gi-Ppeum Jeong, Jae-Young Bae, Jin-Hyung Park, Sung-Goon Kang and Jea-Gun Park