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J. -G. Park, Y. -S. Kwak, C. -S. Lim, K. D. Kwack, and S. Hahn

 

Effects of Oxygen Content of Starting Si Substrate and a a Pre-initial Oxidation Internal Gettering Treatment upon 256 K Dynamic Random Access Memory

 

Proceedings of the Second Symposium on Defects in Silicon: Defects in Silicon II, pp. 589