2011-2015 [2011.04.13] Chemical Mechanical Planarization Mechanism for Nitrogen-Doped Polycrystalline Ge2Sb2Te5 Film Using Nitric Acidic Slurry Added with Hydrogen Peroxide

2021.02.27 18:01

Hao Cui, Jong-Young Cho, Jin-Hyung Park, Hyung Soon Park and Jea-Gun Park

Chemical Mechanical Planarization Mechanism for Nitrogen-Doped Polycrystalline Ge2Sb2Te5 Film Using Nitric Acidic Slurry Added with Hydrogen Peroxide

번호	제목
12	[2011.09.01] A Design of LDO(Low Dropout Regulator) with Enhanced Settling Time and Regulation Property
11	[2011.08.25] Efficiency optimization of charge pump circuit in NAND FLASH memory
10	[2011.08.11] p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires
9	[2011.07.06] A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator
8	[2011.06.15] Effect of the Physical and the Chemical Structures of Ni Nanocrystals on the Nonvolatile Memory Characteristics for Small-molecule Nonvolatile Memory cells Embedded with Ni Nanocrystals
7	[2011.05.01] Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
6	[2011.04.19] Effect of Small-Molecule Layer Thickness on Nonvolatile Memory Characteristics for Small-Molecule Memory-cells
»	[2011.04.13] Chemical Mechanical Planarization Mechanism for Nitrogen-Doped Polycrystalline Ge2Sb2Te5 Film Using Nitric Acidic Slurry Added with Hydrogen Peroxide
4	[2011.04.07] Effect of NH4OH Concentration on Surface Qualities of a Silicon Wafer after Final-Touch Polishing
3	[2011.03.01] Solution-processable fullerene derivatives for organic photovoltaics and n-type thin-film transistors
2	[2011.03.01] Guest Editorial
1	[2011.03.01] Dependence of nonvolatile memory characteristics on curing temperature for polymer memory-cell embedded with Au nanocrystals in Poly(N-vinylcarbazole)

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