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Quantifying yield impact of polishing induced defect on the silicon surface 

 

IEEE/SEMI

번호 제목
222 [2010.06.01] Device Performance and Polymer Layer Morphology in Polymer Bistable Device (PBD): The Control of Physicochemical Properties of Solvent
221 [2010.05.14] Effect of NiOx thin layer fabricated by oxygen-plasma treatment on polymer photovoltaic cell file
220 [2010.04.27] Dependence of SOI Properties on Memory Characteristics in a Cap-less Memory Cell file
219 [2010.04.23] Capacitor-less memory-cell fabricated on nanoscale unstrained Si layer on strained SiGe layer-on-insulator file
218 [2010.04.20] Multiselectivity Chemical Mechanical Polishing for NAND Flash Memories beyond 32 nm
217 [2010.03.23] Optimal Channel Ion Implantation for High Memory Margin of Capacitor-Less Memory Cell Fabricated on Fully Depleted Silicon-on-Insulator file
216 [2010.03.23] Effects of Bulk Microdefects and Metallic Impurities on p-n Junction Leakage Currents in Silicon file
215 [2010.03.08] Role of Hydrogen Peroxide in Alkaline Slurry on the Polishing Rate of Polycrystalline Ge2Sb2Te5 Film in Chemical Mechanical Polishing
214 [2010.03.04] Effect of Hydroxyethyl Cellulose Concentration on Surface Qualities of Silicon Wafer after Touch Polishing Process
213 [2010.03.01] Guest Editorial
212 [2010.01.06] Effect of Organic Additive on Surface Roughness of Polycrystalline Silicon Film after Chemical Mechanical Polishing
211 [2009.12.10] Effect of Metal-Reflection and Surface-Roughness Properties on Power-Conversion Efficiency for Polymer Photovoltaic Cells file
210 [2009.12.06] Nonvolatile Memory Characteristics of Small-molecule Memory Cells with Electron-transport and Hole-transport Bilayers
209 [2009.12.06] Effect of Interface Chemical Properties on Nonvolatile Memory Characteristics for Small-molecule Memory Cells Embedded with Ni Nanocrystals Surrounded by NiO
208 [2009.11.10] Increase in the Adsorption Density of Anionic Molecules on Ceria for Defect-Free STI CMP