2001-2005 [2003.02.20] Electron Mobility Behavior in Ultra Thin and Strained Si Inversion Layer Grown on SiGe-On-Insulator for 50nm MOS-FETs
2019.04.20 15:02
Electron Mobility Behavior in Ultra Thin and Strained Si Inversion Layer Grown on SiGe-On-Insulator for 50nm MOS-FETs
INTERNATIONAL SYMPOSIUM ON MOLECULAR-ENGINEERING ITS DEVELOPMENT INTO MICROSYSTEMS