메뉴 건너뛰기

 

 

New Spectral Analysis Method to Quantify Nanotopography Impact on CMP

 

SEMICON WEST 2002 STS 112

번호 제목
177 [2008.03.26] Process Optimization of Ni Nanocrystals Formation Using O2 Plasma Oxidation to Fabricate Low-molecular Organic Nonvolatile Memory
176 [2008.03.26] Effect of Au Nanocrystals Embedded in Conductive Polymer on Non-volatile Memory Window
175 [2008.03.26] Dependence on Organic Thickness of Electrical Characteristics Behavior in Low Molecular Organic Nonvolatile Memory
174 [2008.03.26] Current Conduction Mechanism for Low-molecular Organic Nonvolatile Memory
173 [2008.03.10] Effect of Physicochemical Properties of Solvents on Microstructure of Conducting Polymer Film for Non-Volatile Polymer Memory
172 [2008.03.07] Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 plasma Oxidation
171 [2008.01.31] Polysilicon CMP for NAND Flash Memory beyond 45nm
170 [2008.01.01] Constraints on removal of Si3N4 film with conformational-controlled poly(acrylic acid) in shallow-trench isolation chemical-mechanical planarization (STI CMP)
169 [2007.12.06] Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
168 [2007.12.06] Effect of Organic Amine in Colloidal Silica Slurry for Copper Chemical Mechanical Polishing
167 [2007.11.04] Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
166 [2007.09.15] Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors file
165 [2007.08.06] Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Remaining Oxide Thickness Variation after Shallow Trench Isolation Chemical Mechanical Polishing
164 [2007.08.06] Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing
163 [2007.07.14] Effects of the Size and the Concentration of the Abrasive in a Colloidal Silica (SiO2) Slurry with Added TMAH on Removal Selectivity of Polysilicon and Oxide Films in Polysilicon Chemical Mechanical Polishing