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G.-S. Lee, T.-H. Shim and J.-G. Park

 

Effect of nano-scale strained Si layer grown on SiGe-on-insulator structure on MOSFET drain current improvement

 

J. Cera. Process. Research 5 (2004) 247

번호 제목
117 [2005.04.01] Slip formation in 300-mm polished and epitaxial silicon wafers annealed by rapid thermal annealing file
116 [2005.03.20] 박재근 PoRAM 최근연구동향 전자공학회지 32권 2호 (2005) 53 file
115 [2005.01.28] Effect of dispersant addition during ceria abrasive milling process on light point defect (LPD) formation after shallow trench isolation chemical mechanical polishing (STI-CMP) file
114 [2005.01.07] Effects of abrasive size and surfactant concentration on the non-prestonian behavior of ceria slurry in shallow trench isolation chemical mechanical polishing file
113 [2004.12.24] STI-CMP용 세리아 슬러리 공급시스템에서 거대입자와 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Effects of Large Particles and Filter Size in Central Chemical Supplying (CCS) System for STI-CMP on Light Point Defects (LPDs)) file
112 [2004.12.01] 세리아 슬러리용 Central Chemical Supplying (CCS) 시스템의 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Filter Size Effect of Central Chemical Supplying (CCS) system for Ceria Slurry on Light Point Defects (LPDs))
111 [2004.11.__] Characteristics of Ru barrier layer in Mo/Ru/Si multilayer for EUV reflector applications file
110 [2004.11.24] Design of Extreme Proximity Gettering
109 [2004.11.01] Influence of physical characteristics of ceria particles on polishing rate of chemical mechanical planarization for shallow trench isolation file
108 [2004.11.01] A reverse selectivity ceria slurry for the damascene gate chemical mechanical planarization process file
107 [2004.10.__] Extended defects and pile-up of interstitial oxygen in silicon wafer due to MeV-level nitrogen ion implantation file
106 [2004.10.__] Effect of Ge mole fraction and Strained Si Thickness on Electron Mobility of FD n-MOSFET Fabricated on Strained Si/Relaxed SiGe/SiO2/Si file
105 [2004.10.__] Determination of the distribution and morphology of silicon islands in the buried oxide layer of SOI wafers by using a focused ion beam and transmission electron microscope file
104 [2004.10.31] 나노 스케일 C-MOSFET에 적용되는 완충된 SiGe층 위에 성장된 나노스케일 변위 실리콘층을 가지는 SOI C-MOSFET file
103 [2004.10.28] Effect of Strained Si Thickness on Electron Scattering Rate in n-MOSFET Fabricated on Strained Si/SiGe/SiO2/Si