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Nonvolatile Memory Characteristics of Small-molecule Memory Cells with Electron-transport and Hole-transport Bilayers

 

Current Applied Physics

번호 제목
227 [2010.12.20] Micro Defect Size in Si Single Crystal Grown by Czochralski Method file
226 [2010.12.15] Four-level Nonvolatile Small-molecule Memory-Cell Embedded with Fe Nanocrystals Surrounded with FeO and Fe2O3 Tunneling Barrier file
225 [2010.09.24] Fabricated nonvolatile memory with Ag nano-crystals embedded in PVK file
224 [2010.09.23] Potassium Permanganate as Oxidizer in Alkaline Slurry for Chemical Mechanical Planarization of Nitrogen-doped Polycrystalline Ge2Sb2Te5 Film
223 [2010.08.10] Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation
222 [2010.06.01] Device Performance and Polymer Layer Morphology in Polymer Bistable Device (PBD): The Control of Physicochemical Properties of Solvent
221 [2010.05.14] Effect of NiOx thin layer fabricated by oxygen-plasma treatment on polymer photovoltaic cell file
220 [2010.04.27] Dependence of SOI Properties on Memory Characteristics in a Cap-less Memory Cell file
219 [2010.04.23] Capacitor-less memory-cell fabricated on nanoscale unstrained Si layer on strained SiGe layer-on-insulator file
218 [2010.04.20] Multiselectivity Chemical Mechanical Polishing for NAND Flash Memories beyond 32 nm
217 [2010.03.23] Optimal Channel Ion Implantation for High Memory Margin of Capacitor-Less Memory Cell Fabricated on Fully Depleted Silicon-on-Insulator file
216 [2010.03.23] Effects of Bulk Microdefects and Metallic Impurities on p-n Junction Leakage Currents in Silicon file
215 [2010.03.08] Role of Hydrogen Peroxide in Alkaline Slurry on the Polishing Rate of Polycrystalline Ge2Sb2Te5 Film in Chemical Mechanical Polishing
214 [2010.03.04] Effect of Hydroxyethyl Cellulose Concentration on Surface Qualities of Silicon Wafer after Touch Polishing Process
213 [2010.03.01] Guest Editorial