376 |
[2024.08.08] Ultraviolet CMOS image sensor for environment analysis via energy-down-shift mechanism of blue-light emitting quantum dots
|
375 |
[2024.06.21] Hybrid Organic–Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit
|
374 |
[2024.04.15] Hardware Implementation of a Fully Functional Stochastic p-STT Neuron for Probabilistic Computing
|
373 |
[2023.11.22] [Co/NM/Pt]n-based seedless synthetic anti-ferromagnetic layer design for preventing MgO crystallinity degradation from Pt diffusion
|
372 |
[2023.11.01] Synaptic variation reduction via embedding Au nanocrystals in resistive switching layer and bottom electrode interface for CuTe/CuO/TiN-stacked synaptic device
|
371 |
[2023.11.01] Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm
|
370 |
[2023.01.18] Fumed Silica-Based Ultra-High-Purity Synthetic Quartz Powder via Sol–Gel Process for Advanced Semiconductor Process beyond Design Rule of 3 nm
|
369 |
[2022.12.13] Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor
|
368 |
[2022.11.14] Chemical mechanical planarization mechanism of epitaxially grown Ge-film for sequential integrating 3D-structured transistor cells
|
367 |
[2022.11.04] Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate
|
366 |
[2022.10.26] Design of Ag–Ga–S2-xSex-based eco-friendly core/shell quantum dots for narrow full-width at half-maximum using noble ZnGa2S4 shell material
|
365 |
[2022.10.13] Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD
|
364 |
[2022.08.18] Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross-Point Synaptic Memristor Array
|
363 |
[2022.06.07] Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner
|
362 |
[2022.03.01] Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate
|