|
182 |
[2008.05.13] Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors
 |
|
181 |
[2008.04.18] Silicon thickness fluctuation scattering dependence of electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors
|
|
180 |
[2008.03.31] Characterization of Organic Light-Emitting Diode (OLED) with Dual Emission using Al:Au Cathode
|
|
179 |
[2008.03.27] Current Conduction Mechanism for Non-volatile Memory Fabricated with Conductive Polymer Embedded Au Nanocrystals
|
|
178 |
[2008.03.26] Small Molecular Organic Nonvolatile Memory Fabricated with Ni Nanocrystals Embedded in Alq3
|
|
177 |
[2008.03.26] Process Optimization of Ni Nanocrystals Formation Using O2 Plasma Oxidation to Fabricate Low-molecular Organic Nonvolatile Memory
|
|
176 |
[2008.03.26] Effect of Au Nanocrystals Embedded in Conductive Polymer on Non-volatile Memory Window
|
|
175 |
[2008.03.26] Dependence on Organic Thickness of Electrical Characteristics Behavior in Low Molecular Organic Nonvolatile Memory
|
|
174 |
[2008.03.26] Current Conduction Mechanism for Low-molecular Organic Nonvolatile Memory
|
|
173 |
[2008.03.10] Effect of Physicochemical Properties of Solvents on Microstructure of Conducting Polymer Film for Non-Volatile Polymer Memory
|
|
172 |
[2008.03.07] Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 plasma Oxidation
|
|
171 |
[2008.01.31] Polysilicon CMP for NAND Flash Memory beyond 45nm
|
|
170 |
[2008.01.01] Constraints on removal of Si3N4 film with conformational-controlled poly(acrylic acid) in shallow-trench isolation chemical-mechanical planarization (STI CMP)
|
|
169 |
[2007.12.06] Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
|
|
168 |
[2007.12.06] Effect of Organic Amine in Colloidal Silica Slurry for Copper Chemical Mechanical Polishing
|
