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128 |
[2005.12.02] Investigation of multilayer structural changes in phase and amplitude-defects correction process
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127 |
[2005.11.09] Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
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126 |
[2005.10.27] Development of Dynamic Interface for Sensor
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125 |
[2005.10.15] Influences of pH and concentration of Surfactant on the Electrokinetic Behavior of a Nano-Ceria Slurry in shallow Trench Isolation Chemical Mechanical Polishing
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124 |
[2005.09.10] Dependency of Phonon-limited Electron Mobility on Si Thickness in strained SGOI (Silicon Germanium on Insulator) n-MOSFET
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123 |
[2005.09.01] 차세대 비휘발성 메모리 소자
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122 |
[2005.09.01] PoRAM 최근 연구 동향 및 향후 개발 방향
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121 |
[2005.07.08] Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
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120 |
[2005.06.01] Cu-CMP에서 Alanine이 Cu와 TaN의 선택비에 미치는 영향
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119 |
[2005.04.28] Design of Compact PIFA for Mobile Communication Handset
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118 |
[2005.04.28] Automatic System and Productivity Elevation
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117 |
[2005.04.01] Slip formation in 300-mm polished and epitaxial silicon wafers annealed by rapid thermal annealing
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116 |
[2005.03.20] 박재근 PoRAM 최근연구동향 전자공학회지 32권 2호 (2005) 53
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115 |
[2005.01.28] Effect of dispersant addition during ceria abrasive milling process on light point defect (LPD) formation after shallow trench isolation chemical mechanical polishing (STI-CMP)
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114 |
[2005.01.07] Effects of abrasive size and surfactant concentration on the non-prestonian behavior of ceria slurry in shallow trench isolation chemical mechanical polishing
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