|
362 |
[2022.03.01] Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate
 |
|
361 |
[2022.03.01] Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical–mechanical-planarization polishing-rate
|
|
360 |
[2022.02.25] Real-Time Correlation Detection via Online Learning of a Spiking Neural Network with a Conductive-Bridge Neuron
|
|
359 |
[2022.01.18] Layer-Dependent Effects of Interfacial Phase-Change Memory for an Artificial Synapse
|
|
358 |
[2022.01.17] Bi-Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon-Based Resistive Random-Access Memory
|
|
357 |
[2021.12.28] Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability
|
|
356 |
[2021.12.24] Perpendicular-spin-transfer-torque magnetic-tunnel-junction neuron for spiking neural networks depending on the nanoscale grain size of the MgO tunnelling barrier
|
|
355 |
[2021.12.04] Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization
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354 |
[2021.11.30] Two-Step Hydrogen-Ion Implantation Annihilation of Threading Dislocation Defects in Strain-Relaxed Si0.7Ge0.3
|
|
353 |
[2021.11.17] Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization
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352 |
[2021.11.04] Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing
|
|
351 |
[2021.10.12] Sputter-grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi-level-cell operation
|
|
350 |
[2021.09.06] Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free
|
|
349 |
[2021.06.18] Enhanced performance of polymer solar cells using selective silver nanocrystal morphology
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|
348 |
[2021.06.04] Self-stopping slurry for planarizing extremely high surface film topography in nanoscale semiconductor devices
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