|
6 |
[1994.__.__] Comparison of Oxide Breakdown Mechanisms Due to D-defects and Oxygen Precipitates
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5 |
[1993.07.01] Effects of Metallic Impurities upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Si
|
|
4 |
[1993.07.01] Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity
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|
3 |
[1992.__.__] Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity
 |
|
2 |
[1991.09.01] Effects of Oxygen Content of Starting Si Substrate and a a Pre-initial Oxidation Internal Gettering Treatment upon 256 K Dynamic Random Access Memory
|
|
1 |
[1991.09.01] Effects of Carbon and Oxygen Impurities in Czochralski Si upon Device Performance and Yield of 1 Mb Dynamic Random Access Memory
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