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347 |
[2021.05.28] Extremely high photoconductivity ultraviolet-light sensor using amorphous In–Ga–Zn–O thin-film-transistor
 |
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346 |
[2021.05.05] Dishing-free chemical mechanical planarization for copper films
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345 |
[2021.04.01] Doping-less tunnel field-effect transistors by compact Si drain frame/Si0.6Ge0.4-channel/Ge source
|
|
344 |
[2021.01.29] Etch characteristics of magnetic tunnel junction materials using H-2/NH3 reactive ion beam
|
|
343 |
[2021.01.13] Design of n+-Base Width of Two-Terminal-Electrode Vertical Thyristor for Cross-Point Memory Cell Without Selector
|
|
342 |
[2020.12.15] Impact of wet ceria abrasive size on initial step height removal efficiency for Isolated SiO2 film chemical mechanical planarization
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341 |
[2020.11.20] Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells
|
|
340 |
[2020.06.28] An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)
|
|
339 |
[2020.06.22] Influence of Scavenger on Abrasive Stability Enhancement and Chemical and Mechanical Properties for Tungsten-Film Chemical- Mechanical-Planarization
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338 |
[2020.06.18] Multi-level resistance uniformity of double pinned perpendicular magnetic-tunneljunction spin-valve depending on top MgO barrier thickness
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|
337 |
[2020.06.08] A Bow-free Freestanding GaN Wafer
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|
336 |
[2020.06.01] Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization
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|
335 |
[2020.05.18] Interfacial Chemical and Mechanical Reactions between Tungsten-Film and Nano-Scale Colloidal Zirconia Abrasives for Chemical-Mechanical-Planarization
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|
334 |
[2020.05.05] Facile synthesis of cobalt–nickel sulfide thin film as a promising counter electrode for triiodide reduction in dye-sensitized solar cells
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|
333 |
[2020.04.30] Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron
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