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321 |
[2018.06.07] One‐Pot Gram‐Scale, Eco‐Friendly, and Cost‐Effective Synthesis of CuGaS2/ZnS Nanocrystals as Efficient UV‐Harvesting Down‐Converter for Photovoltaics
 |
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320 |
[2018.02.01] Investigation of Wafer Warpage Induced by Multi-layer Films
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319 |
[2018.02.01] Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co2Fe6B2 Free Layer using a Single SyAF [Co/Pt]n Layer
|
|
318 |
[2018.01.07] Novel Quantum Dot Enhancement Film with a Super-wide Color Gamut for LCD displays
|
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317 |
[2018.01.07] Nanoscale CuO Solid-electrolyte-based Conductive-bridging, Random-access Memory Cell with a TiN Liner
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316 |
[2017.12.07] Fluorene-Based Conjugated Polymers Containing Acetylene Linkages for Photovoltaics
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315 |
[2017.10.04] (Invited) Design and Challenging Issues of Core/Shell Quantum Dots for Enhancing Power-Conversion-Efficiency in Si Solar-Cells
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314 |
[2017.09.19] Highly Enhanced TMR Ratio and Delta for Double MgO-based p-MTJ Spin-Valves with Top Co2Fe6B2 Free Layer by Nanoscale-thick Iron Diffusion barrier
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313 |
[2017.08.16] Improved Etch Characteristics of Magnetic Tunneling Junction Materials by Using Helium
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312 |
[2017.06.08] Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes
|
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311 |
[2017.03.14] Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering
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|
310 |
[2017.01.22] Enhanced Efficiency and Current Density of Solar Cells via Energy-down-shift Having Energy-tuning-effect of Highly UV-light-harvesting Mn2+-doped Quantum Dots
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309 |
[2016.12.08] Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction
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|
308 |
[2016.11.22] Design of Hydrogen-ion-implantation Induced Gettering for C-MOS Image Sensor
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307 |
[2016.11.04] Perpendicular magnetic tunnel junction (p-MTJ) spin-valves designed with a top Co2Fe6B2 free layer and a nanoscale-thick tungsten bridging and capping layer
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