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Year [2023.11.01] Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm

2023.10.30 18:09

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Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm

https://doi.org/10.1016/j.cej.2023.146257

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