99 |
[2004.09.__] Effect of nano-scale strained Si layer grown on SiGe-on-insulator structure on MOSFET drain current improvement
|
98 |
[2004.08.__] Nature of Surface and Bulk Defects Induced by Epitaxial Layer Growth in Epitaxial Transfer Wafers
|
97 |
[2004.08.16] A Study on the Optimization of the Layout for the ESD Protection Circuit in 0.18µm CMOS Silicide Process
|
96 |
[2004.08.15] Effect of molecular weight of surfactant in nano ceria slurry on shallow trench isolation chemical mechanical polishing (CMP)
|
95 |
[2004.08.10] Dependency of precipitation of interstitial oxygen on its crystal nature in Czochralski silicon wafer
|
94 |
[2004.08.01] Nanotopography impact in shallow trench isolation chemical mechanical polishing-dependence on slurry characteristics
|
93 |
[2004.08.01] Achievement of nano-scale SiGe layer with discrete Ge mole fraction profile using batch-type HVCVD
|
92 |
[2004.07.09] Nanotopography Simulation of Shallow Trench Isolation Chemical Mechanical Polishing using Nano Ceria Slurry
|
91 |
[2004.06.__] Characteristic Study for Defect of Top Si and Buried Oxide Layer on the Bonded SOI Wafer
|
90 |
[2004.06.25] EUVL Mask Defect Isolation and Repair using Focused Ion Beam (Focused Ion Beam을 이용한 EUVL Mask Defect Isolation 및 Repair)
|
89 |
[2004.06.01] Nanotopography Impact in Shallow-Trench Isolation Chemical Mechanical Polishing - Analysis Method and Consumable Dependence
|
88 |
[2004.05.28] EUV Lithography Blank Mask Repair using a FIB
|
87 |
[2004.04.15] Effects of abrasive size and surfactant in nano ceria slurry for shallow trench isolation
|
86 |
[2004.03.__] 초고집적 반도체 STI 연마 공정용세리아 슬러리의 특성이 나노토포그래피에 미치는 영향
|
85 |
[2004.03.01] Effects of Grain Size and Abrasive Size of Polycrystalline Nano-partical Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
|
84 |
[2004.03.01] Effect of the Nano Ceria Slurry Characteristics on end Point Detection Technology for STI CMP
|
83 |
[2004.02.01] Nanotopography impact and non-prestonian Behavior of ceria slurry in shallow trench isolation chemical mechanical polishing (STI-CMP)
|
82 |
[2004.01.15] Dependence of nanotopography impact on abrasive size and surfactant concentration in ceria slurry for shallow trench isolation chemical mechanical polishing
|
81 |
[2003.12.31] Effect of the Abrasive and Additive Concentrations in Nano Ceria Slurry on CMP Pad Temperature
|
80 |
[2003.12.12] 나노 세리아 슬러리에 첨가된 연마입자와 첨가제의 농도가 CMP 연마판 온도에 미치는 영향
|