|
43 |
[2001.11.28] Defects in 300mm crystal and their control
|
|
42 |
[2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
|
|
41 |
[2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon
|
|
40 |
[2001.04.01] Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers
 |
|
39 |
[2001.04.01] Crystal originated particle induced oxide breakdown in Czochralski silicon wafer
|
|
38 |
[2000.12.01] CZ single-crystal silicon without grown-in defects
|
|
37 |
[2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
|
|
36 |
[2000.11.21] Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"
|
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35 |
[2000.07.01] Growth Technology of CZ Silicon Single Crystals without Grown-in Defects
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34 |
[2000.07.01] Advanced Czochralski Single Silicon Crystal Growth
|
|
33 |
[2000.01.01] Crystal originated particle induced isolation failure in Czochralski silicon wafers
|
|
32 |
[1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution
|
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31 |
[1999.10.__] COP induced isolation Failure in CZ Si Wafers
|
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30 |
[1999.09.01] Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing
|
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29 |
[1999.07.12] Challenges of Material Properties for Advanced DRAM Devices
|
|
28 |
[1999.01.01] Numerical Simulations for HgCdTe related detectors
|
|
27 |
[1999.01.01] Novel electron mobility model for n-HgCdTe
|
|
26 |
[1999.01.01] Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation
|
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25 |
[1998.__.__] COP induced oxide breakdown decorated by Cu in CZ Si
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|
24 |
[1998.__.__] Challenge of Material Properties for 300mm Wafers
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