|
19 |
[1996.__.__] Effect of Crystal Characteristics on the DRAM Device Yield
|
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18 |
[1996.__.__] DRAM Wafer Qualification Issues : Oxide integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
 |
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17 |
[1996.11.__] Wafer Engineering for DRAM Devices
|
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16 |
[1996.11.25] Effect of Crystal Defects on Device Characteristics
|
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15 |
[1995.__.__] Observation of Structural, Electrical, and Chemical Nature on Multi-ring Wafer
|
|
14 |
[1995.__.__] Nature of D-defect in CZ Silicon : D-defect Dissolution and D-Defect Related T.D.D.B
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13 |
[1995.__.__] Gate Oxide Integrity in DRAM Devices : The Influence of Substrate D-defects
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12 |
[1995.__.__] Effect of H2 Annealing on Oxide Integrity Improvement
|
|
11 |
[1995.__.__] Defect Oxide Defect Detection by Cu-decoration
|
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10 |
[1995.03.20] Effect of D-defects and Oxygen Precipitates on Oxide Integrity
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9 |
[1994.__.__] Temperature Dependent Electron Beam Induced Current Studies of MOS Capacitor Structures
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8 |
[1994.__.__] Structure and Morphology of "D-defects" in CZ Si
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7 |
[1994.__.__] Correlation of Substrate D-defects in CZ Silicon with MOS Breakdown Site via MOS/EBIC, FIB, and TEM
|
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6 |
[1994.__.__] Comparison of Oxide Breakdown Mechanisms Due to D-defects and Oxygen Precipitates
|
|
5 |
[1993.07.01] Effects of Metallic Impurities upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Si
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4 |
[1993.07.01] Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity
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3 |
[1992.__.__] Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity
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2 |
[1991.09.01] Effects of Oxygen Content of Starting Si Substrate and a a Pre-initial Oxidation Internal Gettering Treatment upon 256 K Dynamic Random Access Memory
|
|
1 |
[1991.09.01] Effects of Carbon and Oxygen Impurities in Czochralski Si upon Device Performance and Yield of 1 Mb Dynamic Random Access Memory
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