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179 |
[2008.03.27] Current Conduction Mechanism for Non-volatile Memory Fabricated with Conductive Polymer Embedded Au Nanocrystals
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178 |
[2008.03.26] Small Molecular Organic Nonvolatile Memory Fabricated with Ni Nanocrystals Embedded in Alq3
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177 |
[2008.03.26] Process Optimization of Ni Nanocrystals Formation Using O2 Plasma Oxidation to Fabricate Low-molecular Organic Nonvolatile Memory
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176 |
[2008.03.26] Effect of Au Nanocrystals Embedded in Conductive Polymer on Non-volatile Memory Window
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175 |
[2008.03.26] Dependence on Organic Thickness of Electrical Characteristics Behavior in Low Molecular Organic Nonvolatile Memory
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174 |
[2008.03.26] Current Conduction Mechanism for Low-molecular Organic Nonvolatile Memory
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173 |
[2008.03.10] Effect of Physicochemical Properties of Solvents on Microstructure of Conducting Polymer Film for Non-Volatile Polymer Memory
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172 |
[2008.03.07] Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 plasma Oxidation
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171 |
[2008.01.31] Polysilicon CMP for NAND Flash Memory beyond 45nm
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170 |
[2008.01.01] Constraints on removal of Si3N4 film with conformational-controlled poly(acrylic acid) in shallow-trench isolation chemical-mechanical planarization (STI CMP)
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169 |
[2007.12.06] Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
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168 |
[2007.12.06] Effect of Organic Amine in Colloidal Silica Slurry for Copper Chemical Mechanical Polishing
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167 |
[2007.11.04] Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
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166 |
[2007.09.15] Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors
 |
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165 |
[2007.08.06] Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Remaining Oxide Thickness Variation after Shallow Trench Isolation Chemical Mechanical Polishing
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164 |
[2007.08.06] Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing
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163 |
[2007.07.14] Effects of the Size and the Concentration of the Abrasive in a Colloidal Silica (SiO2) Slurry with Added TMAH on Removal Selectivity of Polysilicon and Oxide Films in Polysilicon Chemical Mechanical Polishing
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162 |
[2007.06.06] Dependence of Electrical Characteristics on Si Thickness and Ge Concentration for Unstrained Si Grown on Strained SiGe-on-Insulator n-Metal–Oxide–Semiconductor Field-Effect Transistor
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161 |
[2007.05.22] Influence of Crystalline Structure of Ceria on the Remaining Particles in the STI CMP
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160 |
[2007.05.15] Effect of O2 Plasma Treatment on Hole-Injection Enhancement for Organic Light-Emitting Devices with Transparent Au:Al Anodes
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