1990-1995 [1991.09.01] Effects of Carbon and Oxygen Impurities in Czochralski Si upon Device Performance and Yield of 1 Mb Dynamic Random Access Memory
2019.03.31 10:20
J. -G. Park, Y. -S. Kwak, C. -S. Lim, K. D. Kwack, and S. Hahn
Effects of Carbon and Oxygen Impurities in Czochralski Si upon Device Performance and Yield of 1 Mb Dynamic Random Access Memory
Proceedings of the Second Symposium on Defects in Silicon: Defects in Silicon II, pp. 601