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1990-1995 [1995..] Effect of H2 Annealing on Oxide Integrity Improvement

2019.04.02 19:51

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Effect of H2 Annealing on Oxide Integrity Improvement

ECS PV 95-5 ULSI SCIENCE AND TECHNOLOGY

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번호	제목
15	[1995.__.__] Observation of Structural, Electrical, and Chemical Nature on Multi-ring Wafer
14	[1995.__.__] Nature of D-defect in CZ Silicon : D-defect Dissolution and D-Defect Related T.D.D.B
13	[1995.__.__] Gate Oxide Integrity in DRAM Devices : The Influence of Substrate D-defects
»	[1995.__.__] Effect of H2 Annealing on Oxide Integrity Improvement
11	[1995.__.__] Defect Oxide Defect Detection by Cu-decoration
10	[1995.03.20] Effect of D-defects and Oxygen Precipitates on Oxide Integrity
9	[1994.__.__] Temperature Dependent Electron Beam Induced Current Studies of MOS Capacitor Structures
8	[1994.__.__] Structure and Morphology of "D-defects" in CZ Si
7	[1994.__.__] Correlation of Substrate D-defects in CZ Silicon with MOS Breakdown Site via MOS/EBIC, FIB, and TEM
6	[1994.__.__] Comparison of Oxide Breakdown Mechanisms Due to D-defects and Oxygen Precipitates
5	[1993.07.01] Effects of Metallic Impurities upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Si
4	[1993.07.01] Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity
3	[1992.__.__] Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity
2	[1991.09.01] Effects of Oxygen Content of Starting Si Substrate and a a Pre-initial Oxidation Internal Gettering Treatment upon 256 K Dynamic Random Access Memory
1	[1991.09.01] Effects of Carbon and Oxygen Impurities in Czochralski Si upon Device Performance and Yield of 1 Mb Dynamic Random Access Memory

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