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23 |
[2000.12.01] CZ single-crystal silicon without grown-in defects
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22 |
[2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
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21 |
[2000.11.21] Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"
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|
20 |
[2000.07.01] Growth Technology of CZ Silicon Single Crystals without Grown-in Defects
 |
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19 |
[2000.07.01] Advanced Czochralski Single Silicon Crystal Growth
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18 |
[2000.01.01] Crystal originated particle induced isolation failure in Czochralski silicon wafers
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17 |
[1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution
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16 |
[1999.10.__] COP induced isolation Failure in CZ Si Wafers
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15 |
[1999.09.01] Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing
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14 |
[1999.07.12] Challenges of Material Properties for Advanced DRAM Devices
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13 |
[1999.01.01] Numerical Simulations for HgCdTe related detectors
|
|
12 |
[1999.01.01] Novel electron mobility model for n-HgCdTe
|
|
11 |
[1999.01.01] Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation
|
|
10 |
[1998.__.__] COP induced oxide breakdown decorated by Cu in CZ Si
|
|
9 |
[1998.__.__] Challenge of Material Properties for 300mm Wafers
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|
8 |
[1998.09.28] Wafer Requirements : Memory Devices SEMI SILICON WAFER SYMPOSIUM
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7 |
[1997.__.__] Effect of Crystal Defects on Device Characteristics
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6 |
[1997.__.__] 300mm Wafer Technology
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|
5 |
[1997.10.08] Ni/3C-SiC 계면의 Ohmic 특성
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|
4 |
[1996.__.__] Effect of Crystal Characteristics on the DRAM Device Yield
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