72 |
[2004.11.24] Design of Extreme Proximity Gettering
|
71 |
[2004.11.01] Influence of physical characteristics of ceria particles on polishing rate of chemical mechanical planarization for shallow trench isolation
|
70 |
[2004.11.01] A reverse selectivity ceria slurry for the damascene gate chemical mechanical planarization process
|
69 |
[2004.10.__] Extended defects and pile-up of interstitial oxygen in silicon wafer due to MeV-level nitrogen ion implantation
|
68 |
[2004.10.__] Effect of Ge mole fraction and Strained Si Thickness on Electron Mobility of FD n-MOSFET Fabricated on Strained Si/Relaxed SiGe/SiO2/Si
|
67 |
[2004.10.__] Determination of the distribution and morphology of silicon islands in the buried oxide layer of SOI wafers by using a focused ion beam and transmission electron microscope
|
66 |
[2004.10.31] 나노 스케일 C-MOSFET에 적용되는 완충된 SiGe층 위에 성장된 나노스케일 변위 실리콘층을 가지는 SOI C-MOSFET
|
65 |
[2004.10.28] Effect of Strained Si Thickness on Electron Scattering Rate in n-MOSFET Fabricated on Strained Si/SiGe/SiO2/Si
|
64 |
[2004.10.28] Design and Implementation of the Mobile Disaster Management Application System Based on PDA
|
63 |
[2004.10.28] CDS Reliability Test of Contents Aggregater for VOD/NVOD Service.
|
62 |
[2004.09.__] Proximity gettering process for 300-mm silicon wafers
|
61 |
[2004.09.__] Effect of nano-scale strained Si layer grown on SiGe-on-insulator structure on MOSFET drain current improvement
|
60 |
[2004.08.__] Nature of Surface and Bulk Defects Induced by Epitaxial Layer Growth in Epitaxial Transfer Wafers
|
59 |
[2004.08.16] A Study on the Optimization of the Layout for the ESD Protection Circuit in 0.18µm CMOS Silicide Process
|
58 |
[2004.08.15] Effect of molecular weight of surfactant in nano ceria slurry on shallow trench isolation chemical mechanical polishing (CMP)
|
57 |
[2004.08.10] Dependency of precipitation of interstitial oxygen on its crystal nature in Czochralski silicon wafer
|
56 |
[2004.08.01] Nanotopography impact in shallow trench isolation chemical mechanical polishing-dependence on slurry characteristics
|
55 |
[2004.08.01] Achievement of nano-scale SiGe layer with discrete Ge mole fraction profile using batch-type HVCVD
|
54 |
[2004.07.09] Nanotopography Simulation of Shallow Trench Isolation Chemical Mechanical Polishing using Nano Ceria Slurry
|
53 |
[2004.06.__] Characteristic Study for Defect of Top Si and Buried Oxide Layer on the Bonded SOI Wafer
|