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57 |
[2008.07.31] Effect of Alkaline Agent on Polishing Rate of Nitrogen-Doped Ge2Sb2Te5 Film in Chemical Mechanical Polishing
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56 |
[2008.05.20] Hole Mobility Behavior in Strained SiGe-on-SOI p-MOSFETs
 |
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55 |
[2008.05.20] Fabrication and Characterization of Organic Light-Emitting Diodes using Transparent Single-Crystal-Silicon Membrane
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54 |
[2008.05.20] Effect of Organic Amine in Colloidal Silica Slurry on Polishing-Rate Selectivity of Copper to Tantalum-nitride Film in Copper Chemical Mechanical Planarization
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53 |
[2008.05.20] Effect of Alkaline Agent with Organic Additive in Colloidal Silica Slurry on Polishing Rate Selectivity of Polysilicon-to-SiO2 in Polysilicon CMP
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52 |
[2008.05.13] Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors
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51 |
[2008.04.18] Silicon thickness fluctuation scattering dependence of electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors
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50 |
[2008.03.31] Characterization of Organic Light-Emitting Diode (OLED) with Dual Emission using Al:Au Cathode
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49 |
[2008.03.27] Current Conduction Mechanism for Non-volatile Memory Fabricated with Conductive Polymer Embedded Au Nanocrystals
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48 |
[2008.03.26] Small Molecular Organic Nonvolatile Memory Fabricated with Ni Nanocrystals Embedded in Alq3
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47 |
[2008.03.26] Process Optimization of Ni Nanocrystals Formation Using O2 Plasma Oxidation to Fabricate Low-molecular Organic Nonvolatile Memory
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46 |
[2008.03.26] Effect of Au Nanocrystals Embedded in Conductive Polymer on Non-volatile Memory Window
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45 |
[2008.03.26] Dependence on Organic Thickness of Electrical Characteristics Behavior in Low Molecular Organic Nonvolatile Memory
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44 |
[2008.03.26] Current Conduction Mechanism for Low-molecular Organic Nonvolatile Memory
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43 |
[2008.03.10] Effect of Physicochemical Properties of Solvents on Microstructure of Conducting Polymer Film for Non-Volatile Polymer Memory
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42 |
[2008.03.07] Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 plasma Oxidation
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41 |
[2008.01.31] Polysilicon CMP for NAND Flash Memory beyond 45nm
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40 |
[2008.01.01] Constraints on removal of Si3N4 film with conformational-controlled poly(acrylic acid) in shallow-trench isolation chemical-mechanical planarization (STI CMP)
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39 |
[2007.12.06] Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
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38 |
[2007.12.06] Effect of Organic Amine in Colloidal Silica Slurry for Copper Chemical Mechanical Polishing
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