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1996-2000 [1996..] Effect of Crystal Characteristics on the DRAM Device Yield

2019.04.02 20:00

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Effect of Crystal Characteristics on the DRAM Device Yield

SAMSUNG SEMICONDUCTOR TECHNICAL JOURNAL

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번호	제목
32	[1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution
31	[1999.10.__] COP induced isolation Failure in CZ Si Wafers
30	[1999.09.01] Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing
29	[1999.07.12] Challenges of Material Properties for Advanced DRAM Devices
28	[1999.01.01] Numerical Simulations for HgCdTe related detectors
27	[1999.01.01] Novel electron mobility model for n-HgCdTe
26	[1999.01.01] Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation
25	[1998.__.__] COP induced oxide breakdown decorated by Cu in CZ Si
24	[1998.__.__] Challenge of Material Properties for 300mm Wafers
23	[1998.09.28] Wafer Requirements : Memory Devices SEMI SILICON WAFER SYMPOSIUM
22	[1997.__.__] Effect of Crystal Defects on Device Characteristics
21	[1997.__.__] 300mm Wafer Technology
20	[1997.10.08] Ni/3C-SiC 계면의 Ohmic 특성
»	[1996.__.__] Effect of Crystal Characteristics on the DRAM Device Yield
18	[1996.__.__] DRAM Wafer Qualification Issues : Oxide integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing

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