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2001-2005 [2001.12.18] Effect of Film Type and Wafer Shape on Oxide CMP Characteristics

2019.04.02 20:23

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J. G. Park, H. I. Jung, T. Katoh, U. G. Paik, H. Jeon

 

Effect of Film Type and Wafer Shape on Oxide CMP Characteristics

 

J. Korean Phys. Soc. 39 (2001) S296

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51 [2002.04.15] The nanotopography effect of improved single-side-polished wafer on oxide chemical mechanical polishing file
50 [2002.01.15] Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing file
49 [2002.01.15] Effects of film type and nanotopography of wafers on oxide CMP characteristics file
48 [2001.12.18] The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics file
47 [2001.12.18] Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for shallow Trench Isolation file
46 [2001.12.18] Effects of pattern density on CMP removal rate and uniformity file
45 [2001.12.18] Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution file
» [2001.12.18] Effect of Film Type and Wafer Shape on Oxide CMP Characteristics file
43 [2001.11.28] Defects in 300mm crystal and their control
42 [2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
41 [2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon
40 [2001.04.01] Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers file
39 [2001.04.01] Crystal originated particle induced oxide breakdown in Czochralski silicon wafer file
38 [2000.12.01] CZ single-crystal silicon without grown-in defects
37 [2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
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