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2001-2005 [2001.12.18] Effects of pattern density on CMP removal rate and uniformity

2019.04.08 20:31

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B. G. Ko, H. C. Yoo, J. G. Park, U. G. Paik

 

Effects of pattern density on CMP removal rate and uniformity

 

J. Korean Phys. Soc. 39 (2001) S318

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47 [2001.12.18] Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for shallow Trench Isolation file
» [2001.12.18] Effects of pattern density on CMP removal rate and uniformity file
45 [2001.12.18] Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution file
44 [2001.12.18] Effect of Film Type and Wafer Shape on Oxide CMP Characteristics file
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42 [2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
41 [2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon
40 [2001.04.01] Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers file
39 [2001.04.01] Crystal originated particle induced oxide breakdown in Czochralski silicon wafer file
38 [2000.12.01] CZ single-crystal silicon without grown-in defects
37 [2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
36 [2000.11.21] Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"
35 [2000.07.01] Growth Technology of CZ Silicon Single Crystals without Grown-in Defects file
34 [2000.07.01] Advanced Czochralski Single Silicon Crystal Growth file
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