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2001-2005 [2002.05.11] Characterization of surface and bulk defects for SOI wafer

2019.04.08 21:40

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Characterization of surface and bulk defects for SOI wafer

 

The 1st China-Korea Symposium on Semiconductor

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62 [2002.10.25] Electronic parameter variations of the two-dimensional electron gas in modulation-doped nanoscale step quantum wells due to a nanosize embedded potential barrier
61 [2002.10.25] Effect of Slurry and Pad on Nanotopography Impact on Oxide CMP
60 [2002.10.25] Application of MPEG-4 Video to Standalone-based Unmanned Monitoring System
59 [2002.10.25] A Study of Interactive T-Commerce Service based on Data Broadcasting
58 [2002.07.24] New Spectral Analysis Method to Quantify Nanotopography Impact on CMP
57 [2002.07.11] The effect of agglomerated particle size on the chemical mechanical planarization for shallow trench isolation
56 [2002.07.01] The stability of nano fumed silica particles and its influence on chemical mechanical planarization for interlayer dielectrics file
55 [2002.07.01] Spectral Analysis Method for Nanotopography Impact on Pad and Removal Depth Dependency in Oxide CMP file
54 [2002.07.01] Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide CMP file
53 [2002.07.01] Abrasive and Surfactant Effects on Ceria Slurry for Chemical Mechanical Polishing in Shallow Trench Isolation
» [2002.05.11] Characterization of surface and bulk defects for SOI wafer
51 [2002.04.15] The nanotopography effect of improved single-side-polished wafer on oxide chemical mechanical polishing file
50 [2002.01.15] Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing file
49 [2002.01.15] Effects of film type and nanotopography of wafers on oxide CMP characteristics file
48 [2001.12.18] The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics file
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