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2001-2005 [2003.04.__] 고성능 나노 세리아 슬러리 개발  - 256메가 DRAM급 이상 초고집적 반도체 STI 연마 공정용

2019.04.20 15:06

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고성능 나노 세리아 슬러리 개발  - 256메가 DRAM급 이상 초고집적 반도체 STI 연마 공정용

 

MONTHLY SEMICONDUCTOR

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77 [2003.09.__] 나노 세리아 슬러리의 양산 공급 시스템
76 [2003.09.29] Effect of Nano-scale Strained Si Grown on SiGe-on-Insulator on Electron Mobility
75 [2003.09.01] Surfactant Effect on Oxide-to-nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
74 [2003.09.01] Influence of the electrokinetic behaviors of abrasive ceria particles and the deposited plasma-enhanced tetraethylorthosilicate and chemically vapor deposited Si3N4 films in an aqueous medium ...
73 [2003.09.01] Effect of slurry surfactant on nanotopography impact in chemical mechanical polishing
72 [2003.07.16] High Selective Nano Ceria Slurry : Abrasive Size and Surfractant Effects
71 [2003.07.14] Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers file
70 [2003.06.01] Crystal structures of two variants for CuPtb-type ordering in strained CdxZn1-xTe epilayers file
» [2003.04.__] 고성능 나노 세리아 슬러리 개발  - 256메가 DRAM급 이상 초고집적 반도체 STI 연마 공정용
68 [2003.04.__] Dependence of crystal nature on the gettering efficiency of iron and nickel in a Czochralski silicon wafer file
67 [2003.03.15] Effects of the physical characteristics of cerium oxide on plasma-enhanced tetraethylorthosiliate removal rate of chemical mechanical polishing for shallow trench isolation file
66 [2003.03.15] Effects of abrasive morphology and surfactant concentration on polishing rate of ceria slurry file
65 [2003.02.20] Electron Mobility Behavior in Ultra Thin and Strained Si Inversion Layer Grown on SiGe-On-Insulator for 50nm MOS-FETs
64 [2002.10.__] Effect of crystallinity of ceria particles on the PETEOS removal rate in chemical mechanical polishing for shallow trench isolation
63 [2002.10.25] Polishing Condition Dependency of Nanotopography Impacts on Oxide Chemical Mechanical Polishing
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