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2001-2005 [2005.09.10] Dependency of Phonon-limited Electron Mobility on Si Thickness in strained SGOI  (Silicon Germanium on Insulator) n-MOSFET

2019.06.26 15:48

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심태헌, 박재근

 

Dependency of Phonon-limited Electron Mobility on Si Thickness in strained SGOI  (Silicon Germanium on Insulator) n-MOSFET

 

대한전자공학회논문지SD 42 (2005) 9

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