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2001-2005 [2005.10.27] Development of Dynamic Interface for Sensor

2019.06.26 15:50

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Development of Dynamic Interface for Sensor

 

NASNIT 2005

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137 [2006.05.__] Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing file
136 [2006.05.09] Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing file
135 [2006.04.__] To Build Efficient Relationship in e-Commerce by CRM
134 [2006.04.__] Study on Development Direction of Construction Industry using RFID
133 [2006.04.01] Effect of the Hydroxyl-Ethyl-Cellulose Concentration in a Silicon Wafer Polishing Slurry on the Wafer Surface Roughness file
132 [2006.03.__] Effect of Calcination Time on the Physical Properties of Synthesized Ceria Particles for the Shallow Trench Isolation Chemical Mechanical Planarization Process file
131 [2006.02.01] Atomic Force Microscopy Study of the Role of Molecular Weight of Poly(acrylic acid) in Chemical Mechanical Planarization for Shallow Trench Isolation file
130 [2005.12.__] Comparison of phonon-limited electron mobility in strained Si grown on silicon on insulator (sSOI) and SiGe on insulator (SGOI) file
129 [2005.12.08] The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance file
128 [2005.12.02] Investigation of multilayer structural changes in phase and amplitude-defects correction process file
127 [2005.11.09] Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing file
» [2005.10.27] Development of Dynamic Interface for Sensor
125 [2005.10.15] Influences of pH and concentration of Surfactant on the Electrokinetic Behavior of a Nano-Ceria Slurry in shallow Trench Isolation Chemical Mechanical Polishing file
124 [2005.09.10] Dependency of Phonon-limited Electron Mobility on Si Thickness in strained SGOI  (Silicon Germanium on Insulator) n-MOSFET file
123 [2005.09.01] 차세대 비휘발성 메모리 소자 file
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