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JunSeok Lee, SeungNam Cha, JongMin Kim, HyeWon Nam, SangHyo Lee, WonBae Ko, Kang L. Wang, JeaGun Park and JinPyo Hong

 

p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires

 

Adv. Mater. 23 (2011) 4183

번호 제목
257 [2013.02.15] Dependence of Nickel Gettering on Crystalline Nature in As-grown Czochralski Silicon Wafer file
256 [2013.01.03] Corrosion Inhibitors in Sodium Periodate Slurry for Chemical Mechanical Planarization of Ruthenium Film file
255 [2012.12.01] Effect of MeV Nitrogen Ion Implantation on the Resistivity Transition in Czochralski Silicon Wafers file
254 [2012.11.27] Effect of Oxidizers on Chemical Mechanical Planarization of Ruthenium with Colloidal Silica Based Slurry file
253 [2012.11.14] Nonvolatile Hybrid Memory Cell Embedded with Ni Nanocrystals in Poly(3-hexylthiophene)   file
252 [2012.09.27] High polishing selectivity ceria slurry for formation of top electrode in spin-transfer torque magnetic random access memory file
251 [2012.09.21] Effect of Slurry pH and H2O2 on Polycrystalline Ge2Sb2Te5 CMP Performance file
250 [2012.08.01] Effect of a Thermally Evaporated Bis (2-methyl-8-quninolinato)-4-phenylphenolate Cathode Buffer Layer on the Performance of Polymer Photovoltaic Cells file
249 [2012.07.23] Polymer photovoltaic cell embedded with p-type single walled carbon nanotubes fabricated by spray process file
248 [2012.04.04] 실리콘 카바이드(SiC) CMP 슬러리의 연구 동향 file
247 [2012.01.26] Effect of Molecular Weight of Polyvinylpyrrolidone on Corrosion-Inhibition Efficiency of Polycrystalline Ge2Sb2Te5 Film file
246 [2012.01.18] Effect of Potassium Ferricyanide in the Acid Solution on Performance of Tungsten Chemical Mechanical Planarization file
245 [2012.01.13] Study of Ruthenium Oxides Species on Ruthenium Chemical Mechanical Planarization Using Periodate-Based Slurry file
244 [2011.12.21] Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks file
243 [2011.12.16] Influences of Organic Additive Molecular Weight in Colloidal-Silica-Based Slurry on Final Polishing Characteristics of Silicon Wafer file