2016-2020 [2020.06.01] Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization
2021.08.12 14:30
Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization
Eun-Bin Seo, Jae-Young Bae, Jin-Hyung Park and Jea-Gun Park