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312 [2017.06.08] Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes file
311 [2017.03.14] Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering file
310 [2017.01.22] Enhanced Efficiency and Current Density of Solar Cells via Energy-down-shift Having Energy-tuning-effect of Highly UV-light-harvesting Mn2+-doped Quantum Dots file
309 [2016.12.08] Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction file
308 [2016.11.22] Design of Hydrogen-ion-implantation Induced Gettering for C-MOS Image Sensor
307 [2016.11.04] Perpendicular magnetic tunnel junction (p-MTJ) spin-valves designed with a top Co2Fe6B2 free layer and a nanoscale-thick tungsten bridging and capping layer file
306 [2016.11.03] Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers file
305 [2016.10.31] Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 C file
304 [2016.10.03] Development of Silicon Substrate for Advanced Multi-Chip Packaging Process with Enhanced Gettering Ability file
303 [2016.09.27] Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure file
302 [2016.06.13] Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions file
301 [2016.05.15] Highly enhanced perpendicular magnetic anisotropic features in a CoFeB/MgO free layer via WN diffusion barrier file
300 [2016.05.01] Influence of pulsed bias frequency on the etching of magnetic tunneling junction materials file
299 [2015.11.23] Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions file
298 [2015.11.05] Co2Fe6B2/MgO-based perpendicular spintransfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt]n lower syntheticantiferromagnetic layer file