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J. G. Park, J. M. Park, K. C. Cho, G. S. Lee and H. K. Chung

 

Effect of Crystal Defects on Device Characteristics

 

Proceedings of the Symposium on Crystalline Defects and Contamination: Their Impact And Control In Device Manufacturing II, pp. 173

번호 제목
38 [2000.12.01] CZ single-crystal silicon without grown-in defects
37 [2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
36 [2000.11.21] Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"
35 [2000.07.01] Growth Technology of CZ Silicon Single Crystals without Grown-in Defects file
34 [2000.07.01] Advanced Czochralski Single Silicon Crystal Growth file
33 [2000.01.01] Crystal originated particle induced isolation failure in Czochralski silicon wafers
32 [1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution
31 [1999.10.__] COP induced isolation Failure in CZ Si Wafers
30 [1999.09.01] Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing file
29 [1999.07.12] Challenges of Material Properties for Advanced DRAM Devices
28 [1999.01.01] Numerical Simulations for HgCdTe related detectors file
27 [1999.01.01] Novel electron mobility model for n-HgCdTe file
26 [1999.01.01] Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation
25 [1998.__.__] COP induced oxide breakdown decorated by Cu in CZ Si
24 [1998.__.__] Challenge of Material Properties for 300mm Wafers
23 [1998.09.28] Wafer Requirements : Memory Devices SEMI SILICON WAFER SYMPOSIUM
» [1997.__.__] Effect of Crystal Defects on Device Characteristics
21 [1997.__.__] 300mm Wafer Technology
20 [1997.10.08] Ni/3C-SiC 계면의 Ohmic 특성 file
19 [1996.__.__] Effect of Crystal Characteristics on the DRAM Device Yield