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18 [1996.__.__] DRAM Wafer Qualification Issues : Oxide integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing file
17 [1996.11.__] Wafer Engineering for DRAM Devices
16 [1996.11.25] Effect of Crystal Defects on Device Characteristics
15 [1995.__.__] Observation of Structural, Electrical, and Chemical Nature on Multi-ring Wafer
14 [1995.__.__] Nature of D-defect in CZ Silicon : D-defect Dissolution and D-Defect Related T.D.D.B file
13 [1995.__.__] Gate Oxide Integrity in DRAM Devices : The Influence of Substrate D-defects
12 [1995.__.__] Effect of H2 Annealing on Oxide Integrity Improvement
11 [1995.__.__] Defect Oxide Defect Detection by Cu-decoration
10 [1995.03.20] Effect of D-defects and Oxygen Precipitates on Oxide Integrity
9 [1994.__.__] Temperature Dependent Electron Beam Induced Current Studies of MOS Capacitor Structures
8 [1994.__.__] Structure and Morphology of "D-defects" in CZ Si
7 [1994.__.__] Correlation of Substrate D-defects in CZ Silicon with MOS Breakdown Site via MOS/EBIC, FIB, and TEM
6 [1994.__.__] Comparison of Oxide Breakdown Mechanisms Due to D-defects and Oxygen Precipitates
5 [1993.07.01] Effects of Metallic Impurities upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Si
4 [1993.07.01] Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity
3 [1992.__.__] Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity file
2 [1991.09.01] Effects of Oxygen Content of Starting Si Substrate and a a Pre-initial Oxidation Internal Gettering Treatment upon 256 K Dynamic Random Access Memory
1 [1991.09.01] Effects of Carbon and Oxygen Impurities in Czochralski Si upon Device Performance and Yield of 1 Mb Dynamic Random Access Memory