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ASMDDC
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STT-MRAM
Spin Neuron
3D ReRAM
ReRAM Based Synaptic Device
CMP Slurry
SiGe Based FinFET
CMOS Image Sensor
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Thyristor based 1T-DRAM
IZGO FET
Display for Quantum-dots
Solar Cell with Quantum-dots
GaN Substrate
Sapphire Growth
Si Wafer Evaluation for Solar Cell
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[2022.05.15] 첨단 반도체 소재/소자 개발 연구소 스승의 날 행사
[210130] "한국 반도체, 기술 초격차로 중국 따돌리고 대만에 맞서야"
전체
Year
2016-2020
2011-2015
2006-2010
2001-2005
2021-
1996-2000
1990-1995
번호
제목
23
[2000.12.01] CZ single-crystal silicon without grown-in defects
22
[2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
21
[2000.11.21] Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"
20
[2000.07.01] Growth Technology of CZ Silicon Single Crystals without Grown-in Defects
19
[2000.07.01] Advanced Czochralski Single Silicon Crystal Growth
18
[2000.01.01] Crystal originated particle induced isolation failure in Czochralski silicon wafers
17
[1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution
16
[1999.10.__] COP induced isolation Failure in CZ Si Wafers
15
[1999.09.01] Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing
14
[1999.07.12] Challenges of Material Properties for Advanced DRAM Devices
13
[1999.01.01] Numerical Simulations for HgCdTe related detectors
12
[1999.01.01] Novel electron mobility model for n-HgCdTe
11
[1999.01.01] Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation
10
[1998.__.__] COP induced oxide breakdown decorated by Cu in CZ Si
9
[1998.__.__] Challenge of Material Properties for 300mm Wafers
8
[1998.09.28] Wafer Requirements : Memory Devices SEMI SILICON WAFER SYMPOSIUM
7
[1997.__.__] Effect of Crystal Defects on Device Characteristics
6
[1997.__.__] 300mm Wafer Technology
5
[1997.10.08] Ni/3C-SiC 계면의 Ohmic 특성
4
[1996.__.__] Effect of Crystal Characteristics on the DRAM Device Yield