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[210130] "한국 반도체, 기술 초격차로 중국 따돌리고 대만에 맞서야"

번호 제목
23 [2000.12.01] CZ single-crystal silicon without grown-in defects
22 [2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
21 [2000.11.21] Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"
20 [2000.07.01] Growth Technology of CZ Silicon Single Crystals without Grown-in Defects file
19 [2000.07.01] Advanced Czochralski Single Silicon Crystal Growth file
18 [2000.01.01] Crystal originated particle induced isolation failure in Czochralski silicon wafers
17 [1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution
16 [1999.10.__] COP induced isolation Failure in CZ Si Wafers
15 [1999.09.01] Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing file
14 [1999.07.12] Challenges of Material Properties for Advanced DRAM Devices
13 [1999.01.01] Numerical Simulations for HgCdTe related detectors file
12 [1999.01.01] Novel electron mobility model for n-HgCdTe file
11 [1999.01.01] Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation
10 [1998.__.__] COP induced oxide breakdown decorated by Cu in CZ Si
9 [1998.__.__] Challenge of Material Properties for 300mm Wafers
8 [1998.09.28] Wafer Requirements : Memory Devices SEMI SILICON WAFER SYMPOSIUM
7 [1997.__.__] Effect of Crystal Defects on Device Characteristics
6 [1997.__.__] 300mm Wafer Technology
5 [1997.10.08] Ni/3C-SiC 계면의 Ohmic 특성 file
4 [1996.__.__] Effect of Crystal Characteristics on the DRAM Device Yield
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