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12 |
[2002.01.15] Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing
 |
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11 |
[2002.01.15] Effects of film type and nanotopography of wafers on oxide CMP characteristics
|
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10 |
[2001.12.18] The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics
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9 |
[2001.12.18] Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for shallow Trench Isolation
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8 |
[2001.12.18] Effects of pattern density on CMP removal rate and uniformity
|
|
7 |
[2001.12.18] Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution
|
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6 |
[2001.12.18] Effect of Film Type and Wafer Shape on Oxide CMP Characteristics
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5 |
[2001.11.28] Defects in 300mm crystal and their control
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4 |
[2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
|
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3 |
[2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon
|
|
2 |
[2001.04.01] Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers
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|
1 |
[2001.04.01] Crystal originated particle induced oxide breakdown in Czochralski silicon wafer
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