2001-2005 [2001.12.18] Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution

2019.04.02 20:24

J. G. Park, H. K. Park, K. D. Kwack, J. H. Hong

Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution

J. Korean Phys. Soc. 39 (2001) S327

번호	제목
12	[2002.01.15] Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing
11	[2002.01.15] Effects of film type and nanotopography of wafers on oxide CMP characteristics
10	[2001.12.18] The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics
9	[2001.12.18] Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for shallow Trench Isolation
8	[2001.12.18] Effects of pattern density on CMP removal rate and uniformity
»	[2001.12.18] Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution
6	[2001.12.18] Effect of Film Type and Wafer Shape on Oxide CMP Characteristics
5	[2001.11.28] Defects in 300mm crystal and their control
4	[2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
3	[2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon
2	[2001.04.01] Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers
1	[2001.04.01] Crystal originated particle induced oxide breakdown in Czochralski silicon wafer

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