2001-2005 [2001.12.18] The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics

2019.04.08 20:34

U. Paik, J. P. Kim, Y. S. Jung, Y. G. Jung, T. Katoh, J. G. Park, V. A. Hackley

The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics

J. Korean Phys. Soc. 39 (2001) S201

번호	제목
12	[2002.01.15] Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing
11	[2002.01.15] Effects of film type and nanotopography of wafers on oxide CMP characteristics
»	[2001.12.18] The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics
9	[2001.12.18] Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for shallow Trench Isolation
8	[2001.12.18] Effects of pattern density on CMP removal rate and uniformity
7	[2001.12.18] Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution
6	[2001.12.18] Effect of Film Type and Wafer Shape on Oxide CMP Characteristics
5	[2001.11.28] Defects in 300mm crystal and their control
4	[2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
3	[2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon
2	[2001.04.01] Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers
1	[2001.04.01] Crystal originated particle induced oxide breakdown in Czochralski silicon wafer

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