1990-1995 [1991.09.01] Effects of Oxygen Content of Starting Si Substrate and a a Pre-initial Oxidation Internal Gettering Treatment upon 256 K Dynamic Random Access Memory
2019.03.31 10:50
J. -G. Park, Y. -S. Kwak, C. -S. Lim, K. D. Kwack, and S. Hahn
Effects of Oxygen Content of Starting Si Substrate and a a Pre-initial Oxidation Internal Gettering Treatment upon 256 K Dynamic Random Access Memory
Proceedings of the Second Symposium on Defects in Silicon: Defects in Silicon II, pp. 589