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2001-2005 [2005.03.20] 박재근 PoRAM 최근연구동향 전자공학회지 32권 2호 (2005) 53

2019.06.26 15:39

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박재근

 

PoRAM 최근연구동향

 

전자공학회지 32권 2호 (2005) 53

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공지 Update 진행중
122 [2005.07.08] Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing file
121 [2005.06.01] Cu-CMP에서 Alanine이 Cu와 TaN의 선택비에 미치는 영향 file
120 [2005.04.28] Design of Compact PIFA for Mobile Communication Handset
119 [2005.04.28] Automatic System and Productivity Elevation
118 [2005.04.01] Slip formation in 300-mm polished and epitaxial silicon wafers annealed by rapid thermal annealing file
» [2005.03.20] 박재근 PoRAM 최근연구동향 전자공학회지 32권 2호 (2005) 53 file
116 [2005.01.28] Effect of dispersant addition during ceria abrasive milling process on light point defect (LPD) formation after shallow trench isolation chemical mechanical polishing (STI-CMP) file
115 [2005.01.07] Effects of abrasive size and surfactant concentration on the non-prestonian behavior of ceria slurry in shallow trench isolation chemical mechanical polishing file
114 [2004.12.24] STI-CMP용 세리아 슬러리 공급시스템에서 거대입자와 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Effects of Large Particles and Filter Size in Central Chemical Supplying (CCS) System for STI-CMP on Light Point Defects (LPDs)) file
113 [2004.12.01] 세리아 슬러리용 Central Chemical Supplying (CCS) 시스템의 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Filter Size Effect of Central Chemical Supplying (CCS) system for Ceria Slurry on Light Point Defects (LPDs))
112 [2004.11.__] Characteristics of Ru barrier layer in Mo/Ru/Si multilayer for EUV reflector applications file
111 [2004.11.24] Design of Extreme Proximity Gettering
110 [2004.11.01] Influence of physical characteristics of ceria particles on polishing rate of chemical mechanical planarization for shallow trench isolation file
109 [2004.11.01] A reverse selectivity ceria slurry for the damascene gate chemical mechanical planarization process file
108 [2004.10.__] Extended defects and pile-up of interstitial oxygen in silicon wafer due to MeV-level nitrogen ion implantation file
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