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[2022.05.15] 첨단 반도체 소재/소자 개발 연구소 스승의 날 행사








[210130] "한국 반도체, 기술 초격차로 중국 따돌리고 대만에 맞서야"

번호 제목
197 [2009.01.16] Dependence of memory margin of Cap-less memory cell on top Si thickness
196 [2008.12.02] Surface Polarity and Shape-Controlled Synthesis of ZnO Nanostructures on GaN Thin Films Based on Catalyst-Free Metalorganic Vapor Phase Epitaxy
195 [2008.12.01] Effect of Abrasive Material Properties on Polishing Rate Selectivity of Nitrogen-doped Ge2Sb2Te5 to SiO2 Film in Chemical Mechanical Polishing
194 [2008.11.07] The impact of wafer nanotopography on threshold voltage variation in NAND flash memory cells fabricated with poly-silicon chemical mechnical polishing
193 [2008.10.15] Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-insulator p-MOSFETs
192 [2008.09.12] Selectivity Enhancement in the Removal of SiO2 and Si3N4 Films with Addition of Triethanolamine in a Ceria Slurry during Shallow Trench Isolation Chemical Mechanical Polishing
191 [2008.09.01] Titanium Dioxide Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition for OLED Passivation file
190 [2008.09.01] Crystalline Structure of Ceria Particles Controlled by the Oxygen Partial Pressure and STI CMP Performances
189 [2008.08.15] Thin Transparent Single-Crystal Silicon Membranes Made Using a Silicon-on-Nitride Wafer
188 [2008.08.03] Dependency of Power Conversion Efficiency on Donor, Acceptor, and Blocking layer thickness for small-molecular Organic Solar Cell
187 [2008.07.31] Effect of Alkaline Agent on Polishing Rate of Nitrogen-Doped Ge2Sb2Te5 Film in Chemical Mechanical Polishing
186 [2008.05.20] Hole Mobility Behavior in Strained SiGe-on-SOI p-MOSFETs file
185 [2008.05.20] Fabrication and Characterization of Organic Light-Emitting Diodes using Transparent Single-Crystal-Silicon Membrane
184 [2008.05.20] Effect of Organic Amine in Colloidal Silica Slurry on Polishing-Rate Selectivity of Copper to Tantalum-nitride Film in Copper Chemical Mechanical Planarization
183 [2008.05.20] Effect of Alkaline Agent with Organic Additive in Colloidal Silica Slurry on Polishing Rate Selectivity of Polysilicon-to-SiO2 in Polysilicon CMP
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