메뉴 건너뛰기

2001-2005 [2004.01.15] Dependence of nanotopography impact on abrasive size and surfactant concentration in ceria slurry for shallow trench isolation chemical mechanical polishing

2019.05.02 17:51

Administrator 조회 수:49

Hyun-Goo Kang, Takeo Katoh, Won-Mo Lee, Ungyu Paik and Jea-Gun Park

 

Dependence of nanotopography impact on abrasive size and surfactant concentration in ceria slurry for shallow trench isolation chemical mechanical polishing

 

Jpn. J. Appl. Phys. 43 (2004) L1

이 게시물을
목록
목록
번호 제목
207 [2009.10.13] The fabrication and characterization of organic light-emitting diodes using transparent single-crystal Si membranes file
206 [2009.08.01] Electrical behavior of ultra-thin body silicon-on-insulator n-MOSFETs at a high operating temperature
205 [2009.07.28] The effect of donor layer thickness on the power conversion efficiency of organic photovoltaic device fabricated with a double small-molecular layer file
204 [2009.07.01] Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
203 [2009.06.09] High-removal selectivity through interaction between polyacrylamide and SiO2 film in poly isolation chemical mechanical planarization
202 [2009.05.31] Impact of donor, acceptor, and blocking layer thickness on power conversion efficiency for small-molecular organic solar cell file
201 [2009.05.10] Quantifying yield impact of polishing induced defect on the silicon surface
200 [2009.03.24] Multilevel Nonvolatile Small-Molecule Memory Cell Embedded with Ni Nanocrystals Surrounded by a NiO Tunneling Barrier
199 [2009.03.04] Effect of Interface Thickness on Power Conversion Efficiency of Polymer Photovoltaic Cells file
198 [2009.02.17] Comparative study of self-heating effect on electron mobility in nano-scale strained silicon-on-insulator and strained silicon grown on relaxed SiGe-on-insulator n-metal-oxide-semiconductor field-effect transistors file
197 [2009.01.16] Dependence of memory margin of Cap-less memory cell on top Si thickness
196 [2008.12.02] Surface Polarity and Shape-Controlled Synthesis of ZnO Nanostructures on GaN Thin Films Based on Catalyst-Free Metalorganic Vapor Phase Epitaxy
195 [2008.12.01] Effect of Abrasive Material Properties on Polishing Rate Selectivity of Nitrogen-doped Ge2Sb2Te5 to SiO2 Film in Chemical Mechanical Polishing
194 [2008.11.07] The impact of wafer nanotopography on threshold voltage variation in NAND flash memory cells fabricated with poly-silicon chemical mechnical polishing
193 [2008.10.15] Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-insulator p-MOSFETs
쓰기
태그