196 |
[2008.12.02] Surface Polarity and Shape-Controlled Synthesis of ZnO Nanostructures on GaN Thin Films Based on Catalyst-Free Metalorganic Vapor Phase Epitaxy
|
195 |
[2008.12.01] Effect of Abrasive Material Properties on Polishing Rate Selectivity of Nitrogen-doped Ge2Sb2Te5 to SiO2 Film in Chemical Mechanical Polishing
|
194 |
[2008.11.07] The impact of wafer nanotopography on threshold voltage variation in NAND flash memory cells fabricated with poly-silicon chemical mechnical polishing
|
193 |
[2008.10.15] Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-insulator p-MOSFETs
|
192 |
[2008.09.12] Selectivity Enhancement in the Removal of SiO2 and Si3N4 Films with Addition of Triethanolamine in a Ceria Slurry during Shallow Trench Isolation Chemical Mechanical Polishing
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191 |
[2008.09.01] Titanium Dioxide Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition for OLED Passivation
|
190 |
[2008.09.01] Crystalline Structure of Ceria Particles Controlled by the Oxygen Partial Pressure and STI CMP Performances
|
189 |
[2008.08.15] Thin Transparent Single-Crystal Silicon Membranes Made Using a Silicon-on-Nitride Wafer
|
188 |
[2008.08.03] Dependency of Power Conversion Efficiency on Donor, Acceptor, and Blocking layer thickness for small-molecular Organic Solar Cell
|
187 |
[2008.07.31] Effect of Alkaline Agent on Polishing Rate of Nitrogen-Doped Ge2Sb2Te5 Film in Chemical Mechanical Polishing
|
186 |
[2008.05.20] Hole Mobility Behavior in Strained SiGe-on-SOI p-MOSFETs
|
185 |
[2008.05.20] Fabrication and Characterization of Organic Light-Emitting Diodes using Transparent Single-Crystal-Silicon Membrane
|
184 |
[2008.05.20] Effect of Organic Amine in Colloidal Silica Slurry on Polishing-Rate Selectivity of Copper to Tantalum-nitride Film in Copper Chemical Mechanical Planarization
|
183 |
[2008.05.20] Effect of Alkaline Agent with Organic Additive in Colloidal Silica Slurry on Polishing Rate Selectivity of Polysilicon-to-SiO2 in Polysilicon CMP
|
182 |
[2008.05.13] Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors
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