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[210130] "한국 반도체, 기술 초격차로 중국 따돌리고 대만에 맞서야"

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342 [2020.12.15] Impact of wet ceria abrasive size on initial step height removal efficiency for Isolated SiO2 film chemical mechanical planarization file
341 [2020.11.20] Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells file
340 [2020.06.28] An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM) file
339 [2020.06.22] Influence of Scavenger on Abrasive Stability Enhancement and Chemical and Mechanical Properties for Tungsten-Film Chemical- Mechanical-Planarization
338 [2020.06.18] Multi-level resistance uniformity of double pinned perpendicular magnetic-tunneljunction spin-valve depending on top MgO barrier thickness file
337 [2020.06.08] A Bow-free Freestanding GaN Wafer file
336 [2020.06.01] Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization file
335 [2020.05.18] Interfacial Chemical and Mechanical Reactions between Tungsten-Film and Nano-Scale Colloidal Zirconia Abrasives for Chemical-Mechanical-Planarization file
334 [2020.05.05] Facile synthesis of cobalt–nickel sulfide thin film as a promising counter electrode for triiodide reduction in dye-sensitized solar cells file
333 [2020.04.30] Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron file
332 [2020.01.08] Dislocation sink annihilating threading dislocations in strain-relaxed Si1−xGex layer file
331 [2019.12.01] Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning file
330 [2019.12.01] Enhanced Thermal Stability in Magnetic Random-Access Memory Cells With Free Layer Composed of Multilayer Co/Pt Coupled to Co2Fe6B2 With Interfacial Perpendicular Magnetic Anisotropy file
329 [2019.10.23] Surface-tensile-stress induced polishing-voids suppression via H2O2 oxidizer effect in cross-point phase-change-memory-cells file
328 [2019.08.15] Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States file
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