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366 |
[2022.10.26] Design of Ag–Ga–S2-xSex-based eco-friendly core/shell quantum dots for narrow full-width at half-maximum using noble ZnGa2S4 shell material
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365 |
[2022.10.13] Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD
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364 |
[2022.08.18] Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross-Point Synaptic Memristor Array
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363 |
[2022.06.07] Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner
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362 |
[2022.03.01] Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate
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361 |
[2022.03.01] Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical–mechanical-planarization polishing-rate
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360 |
[2022.02.25] Real-Time Correlation Detection via Online Learning of a Spiking Neural Network with a Conductive-Bridge Neuron
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359 |
[2022.01.18] Layer-Dependent Effects of Interfacial Phase-Change Memory for an Artificial Synapse
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358 |
[2022.01.17] Bi-Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon-Based Resistive Random-Access Memory
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357 |
[2021.12.28] Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability
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|
356 |
[2021.12.24] Perpendicular-spin-transfer-torque magnetic-tunnel-junction neuron for spiking neural networks depending on the nanoscale grain size of the MgO tunnelling barrier
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355 |
[2021.12.04] Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization
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354 |
[2021.11.30] Two-Step Hydrogen-Ion Implantation Annihilation of Threading Dislocation Defects in Strain-Relaxed Si0.7Ge0.3
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353 |
[2021.11.17] Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization
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352 |
[2021.11.04] Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing
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