2016-2020 [2017.03.14] Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering
2021.08.12 14:15
Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering
Il-Hwan Kim, Jun-Seong Park, Tae-Hun Shim and Jea-Gun Park