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66 |
[2003.03.15] Effects of abrasive morphology and surfactant concentration on polishing rate of ceria slurry
 |
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65 |
[2003.02.20] Electron Mobility Behavior in Ultra Thin and Strained Si Inversion Layer Grown on SiGe-On-Insulator for 50nm MOS-FETs
|
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64 |
[2002.10.__] Effect of crystallinity of ceria particles on the PETEOS removal rate in chemical mechanical polishing for shallow trench isolation
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63 |
[2002.10.25] Polishing Condition Dependency of Nanotopography Impacts on Oxide Chemical Mechanical Polishing
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62 |
[2002.10.25] Electronic parameter variations of the two-dimensional electron gas in modulation-doped nanoscale step quantum wells due to a nanosize embedded potential barrier
|
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61 |
[2002.10.25] Effect of Slurry and Pad on Nanotopography Impact on Oxide CMP
|
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60 |
[2002.10.25] Application of MPEG-4 Video to Standalone-based Unmanned Monitoring System
|
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59 |
[2002.10.25] A Study of Interactive T-Commerce Service based on Data Broadcasting
|
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58 |
[2002.07.24] New Spectral Analysis Method to Quantify Nanotopography Impact on CMP
|
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57 |
[2002.07.11] The effect of agglomerated particle size on the chemical mechanical planarization for shallow trench isolation
|
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56 |
[2002.07.01] The stability of nano fumed silica particles and its influence on chemical mechanical planarization for interlayer dielectrics
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55 |
[2002.07.01] Spectral Analysis Method for Nanotopography Impact on Pad and Removal Depth Dependency in Oxide CMP
|
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54 |
[2002.07.01] Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide CMP
|
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53 |
[2002.07.01] Abrasive and Surfactant Effects on Ceria Slurry for Chemical Mechanical Polishing in Shallow Trench Isolation
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52 |
[2002.05.11] Characterization of surface and bulk defects for SOI wafer
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