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47 |
[2001.12.18] Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for shallow Trench Isolation
 |
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46 |
[2001.12.18] Effects of pattern density on CMP removal rate and uniformity
|
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45 |
[2001.12.18] Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution
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44 |
[2001.12.18] Effect of Film Type and Wafer Shape on Oxide CMP Characteristics
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43 |
[2001.11.28] Defects in 300mm crystal and their control
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42 |
[2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
|
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41 |
[2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon
|
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40 |
[2001.04.01] Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers
|
|
39 |
[2001.04.01] Crystal originated particle induced oxide breakdown in Czochralski silicon wafer
|
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38 |
[2000.12.01] CZ single-crystal silicon without grown-in defects
|
|
37 |
[2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
|
|
36 |
[2000.11.21] Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"
|
|
35 |
[2000.07.01] Growth Technology of CZ Silicon Single Crystals without Grown-in Defects
|
|
34 |
[2000.07.01] Advanced Czochralski Single Silicon Crystal Growth
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33 |
[2000.01.01] Crystal originated particle induced isolation failure in Czochralski silicon wafers
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